Abundant topological phases in hydrogenated group-IV binary alloy compounds
نویسندگان
چکیده
منابع مشابه
Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds.
We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct g...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2021
ISSN: 2046-2069
DOI: 10.1039/d1ra01136g